3535 LED light beads ceramic substrate

MATERIAL DATA SHEET，96 Al₂O₃ ceramic

Aluminum Nitride (AlN) Ceramic Material Properties

Property Value Unit Notes

Color Gray — Visual identification of material

Volume Density ≥ 3.333 g/cm³ High density indicates low porosity and enhanced mechanical/thermal performance

Thermal Conductivity ≥ 170 W/(m·K), 20℃ Excellent thermal management for power electronics, LEDs, and semiconductors

Dielectric Constant 8–10 (1 MHz) Stable at high frequencies, suitable for 5G/microwave components

Dielectric Loss 3 × 10⁻⁴ — Ultra-low energy loss, ideal for high-voltage insulation

Dielectric Strength > 17 kV/mm High voltage resistance for power modules and electrical insulation

Flexural Strength > 450 MPa High structural reliability despite ceramic brittleness

Camber (Flatness) < 3‰ Length % Critical for semiconductor packaging and precision components

Water Absorption Negligible % Zero porosity ensures chemical stability and moisture resistance

Volume Resistivity > 10⁸ Ω·cm, 20℃ Near-perfect electrical insulation for high-power applications

Thermal Expansion Coefficient 2–3 × 10⁻⁶/K (20–300℃) ×10⁻⁶/K Matches silicon/GaN semiconductors for thermal cycling reliability

Key Features Summary

Performance Category Advantages

Thermal High thermal conductivity (170 W/m·K) + low CTE (2–3 × 10⁻⁶/K)

Electrical Ultra-low dielectric loss (3 × 10⁻⁴) + high resistivity (>10⁸ Ω·cm)

Mechanical High flexural strength (450 MPa) + minimal camber (<3‰)

Stability Zero water absorption + chemical inertness

Typical Applications

Electronic Packaging

IGBT/SiC/GaN power modules

LED heat dissipation substrates

MEMS device carriers

Semiconductor Manufacturing

Wafer chucks for CMP processes

Plasma chamber components (high-temperature corrosion resistance)

High-Temperature Insulation

Aerospace thermal insulation structures

High-temperature sensor substrates

Precision Components

Laser heat sinks (high-power)

Optical platform insulators

Technical Differentiation

Thermal-Electrical Synergy:

Combines metal-like thermal conductivity (170 W/m·K) with ceramic-level insulation (>10⁸ Ω·cm).

Thermal Cycling Reliability:

CTE matches silicon (2.6 × 10⁻⁶/K) and GaN, minimizing stress during operation.

Precision Fabrication:

<3‰ flatness ensures compatibility with semiconductor packaging and photolithography.

Why AlN Ceramic Stands Out

"AlN bridges the gap between traditional ceramics (e.g., Al₂O₃) and metals. Its unique combination of high thermal conductivity, electrical insulation, and dimensional stability makes it indispensable for next-gen electronics—from 5G base stations to EV power modules."